unisonic technologies co., ltd dta114y pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r206-073,g digital transistor (built- in bias resistors) ? features * built-in bias resistors that im plies easy on/off applications. * the bias resistors are thin-film resistors with complete isolation to allow positive input. ? equivalent circuit to-92 1 sot-523 3 2 1 sot-323 3 2 1 sot-23 3 2 1 ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing dta114yl-ae3-r dta114yg-ae3-r sot-23 g i o tape reel dta114yl-al3-r dta114yg-al3-r sot-323 g i o tape reel dta114yl-an3-r DTA114YG-AN3-R sot-523 g i o tape reel dta114yl-t92-b dta114yg-t92-b to-92 g o i tape box dta114yl-t92-k dta114yg-t92-k to-92 g o i bulk ? marking(for sot package) ab4y y: lead free y : halogen free
dta114y pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-073,g ? absolute maximum rating parameter symbol ratings unit supply voltage v cc -50 v input voltage v in -40~+6 v i out -70 ma output current i c(max) -100 ma sot-523 150 mw sot-23/sot-323 200 mw power dissipation to-92 p d 625 mw junction temperature t j +150 storage temperature t stg -55~+150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit sot-23 302 c/w sot-323 315 c/w sot-523 318 c/w junction to ambient to-92 ja 183 c/w sot-23 145 c/w sot-323 143 c/w sot-523 130 c/w junction to case to-92 jc 89 c/w ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit v in(off) v cc =-5v, i out =-100 a -0.3 v input voltage v in(on) v out =-0.3v, i out =-1ma -1.4 v output voltage v out (on) i out /i in =-5ma/-0.25ma -0.1 -0.3 v input current i in v in =-5v -0.88 ma output current i out(off) v cc =-50v, v in =0v -0.5 a dc current gain h fe v out =-5v, i out =-5ma 68 input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 3.7 4.7 5.7 transition frequency f t v ce =-10v, i e =5ma, f=100mhz(note) 250 mhz note: transition frequency of the device
dta114y pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-073,g ? typical characteristics input voltage ,v in(on) (v) output current, i out (a) dc current gain, h fe output voltage, v out(on) (v) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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